Study of High Quality Indium Nitride Films Grown on Si(100) Substrate by RF-MOMBE with GZO and AlN Buffer Layers
نویسندگان
چکیده
منابع مشابه
Study of InN epitaxial films and nanorods grown on GaN template by RF-MOMBE
This paper reports on high-quality InN materials prepared on a GaN template using radio-frequency metalorganic molecular beam epitaxy. We also discuss the structural and electro-optical properties of InN nanorods/films. The X-ray diffraction peaks of InN(0002) and InN(0004) were identified from their spectra, indicating that the (0001)-oriented hexagonal InN was epitaxially grown on the GaN tem...
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In this research the growth of InN epilayers by high-pressure chemical vapor deposition (HPCVD) and structural, optical properties of HPCVD grown InN layers has been studied. We demonstrated that the HPCVD approach suppresses the thermal decomposition of InN, and therefore extends the processing parameters towards the higher growth temperatures (up to 1100K for reactor pressures of 15 bar, mola...
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Surface termination and electronic properties of InN layers grown by high pressure chemical vapor deposition have been studied by high resolution electron energy loss spectroscopy (HREELS). HREEL spectra from InN after atomic hydrogen cleaning show N–H termination with no indium overlayer or droplets and indicate that the layer is N-polar. Broad conduction band plasmon excitations are observed ...
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The improvement of the physical properties of Indium Tin Oxide (ITO) layers is quite advantageous in photovoltaic applications. In this study the ITO film is deposited by RF sputtering onto p-type crystalline silicon (c-Si) with (100) orientation, multicrystalline silicon (mc-Si), and glass substrates coated with ZnO and annealed in vacuum furnace at 400°C. Electrical, optical, structural a...
متن کاملEffect of In/Al ratios on structural and optical properties of InAlN films grown on Si(100) by RF-MOMBE
In x Al1-x N films were deposited on Si(100) substrate using metal-organic molecular beam epitaxy. We investigated the effect of the trimethylindium/trimethylaluminum (TMIn/TMAl) flow ratios on the structural, morphological, and optical properties of In x Al1-x N films. Surface morphologies and microstructure of the In x Al1-x N films were measured by atomic force microscopy, scanning electron ...
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ژورنال
عنوان ژورنال: Journal of Nanomaterials
سال: 2012
ISSN: 1687-4110,1687-4129
DOI: 10.1155/2012/853021